Over past decades, many are searching for good candidates to bridge the performance gap between high-speed but volatile DRAM and long latency yet non-volatile block storage devices, e.g., hard disks. Flash memory has achieved good success in the storage segment and gradually predominates the storage application because of its random access performance and low bit cost. Storage Class Memory, so-called SCM, is also deemed as a disruptive technology that embraces both good properties of byte-addressability, low-latency, and non-volatility. In this talk, I will introduce the technologies for both flash and SCM and how controllers can manage different kinds of NVM for the diverse demands.
Dr. Chang is Engineering Director at Wolley since 2016 in charge of technology and product development for storage class memory (SCM) controller and key-value (KV) SSD. Prior to joining Wolley, he served as manager till 2015 in Emerging System Lab, a division of Macronix Taiwan, and technical consultant till 2012 in National Security Bureau. Dr. Chang received his Ph.D. degree in Computer Science and Information Engineering at National Taiwan University in 2015. Dr. Chang published more than 35 technical papers in global conferences including DAC, ICCAD, and ISPLED. He also submitted 40+ patent applications, and received 21 patents.